Arizona Microtek, Inc.
AZP63
Low Phase Noise Sine Wave CMOS
to LVPECL Buffer/Translator
Table 5 - DC Characteristics
DC Characteristics (VDD = 3.0V to 3.6V unless otherwise specified, TA = -40 to 85 °C)
Unit
V
Symbol
Characteristic
Conditions
Min
2.2
2.2
2.2
1.4
1.4
1.4
Typ
Max
2.45
2.45
2.45
1.68
1.68
1.68
-40 C
25 C
85 C
-40 C
25 C
85 C
VOH
Output HIGH Voltage1
VDD = 3.3V
VOL
Output LOW Voltage1
VDD = 3.3V
V
Output Leakage Current,
Tri-state2
IZ
EN=Disable
-10
2
10
μA
V
EN_SEL
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
DIV_SEL
EN
0.8
V
IPU
IPD
Pullup Current
EN_SEL
2.2
μA
μA
Pulldown Current
DIV_SEL
-2.2
IP
Pullup/Pulldown Current
EN
±2.2
μA
D Input to Internal VDD/2
RBIAS
IDD
Bias Resistor
10k
64
Ω
Reference
Power Supply Current
70
88
mA
mA
Power Supply Current Fast
Switching1,3,4
IDDSW
Input Freq >1GHz
Power Supply Current
Outputs Tri-State1
IDDZ
8
mA
D Input ≤ VIL EN=Disables
1 Specified with outputs terminated through 50Ω resistors to VDD - 2V or Thevenin equivalent.
2 Measured at Q /Q pins.
3 Includes load current through external 50Ω resistors to VDD - 2V
4 Current measured in ÷1 mode, D and Q /Q pins switching at
1000MHz
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Mar 2013, Rev 2.2