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HCPL-316J 参数 Datasheet PDF下载

HCPL-316J图片预览
型号: HCPL-316J
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5安培门驱动光电耦合器与集成( VCE)去饱和检测和故障状态反馈 [2.5 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback]
分类和应用: 光电接口集成电路光电二极管信息通信管理驱动
文件页数/大小: 33 页 / 596 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
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Typical Application/Operation  
Introduction to Fault Detection and Protection  
The power stage of a typical three phase inverter is sus-  
ceptible to several types of failures, most of which are  
potentially destructive to the power IGBTs. These failure  
modes can be grouped into four basic categories: phase  
and/or rail supply short circuits due to user misconnect  
or bad wiring, control signal failures due to noise or com-  
putational errors, overload conditions induced by the  
load, and component failures in the gate drive circuitry.  
Under any of these fault conditions, the current through  
the IGBTs can increase rapidly, causing excessive power  
dissipation and heating. The IGBTs become damaged  
when the current load approaches the saturation cur-  
rent of the device, and the collector to emitter voltage  
rises above the saturation voltage level. The drastically  
increased power dissipation very quickly overheats the  
power device and destroys it. To prevent damage to the  
drive, fault protection must be implemented to reduce  
or turn-off the overcurrents during a fault condition.  
The alternative protection scheme of measuring IGBT  
current to prevent desaturation is effective if the short  
circuit capability of the power device is known, but  
this method will fail if the gate drive voltage decreases  
enough to only partially turn on the IGBT. By directly  
measuring the collector voltage, the HCPL-316J limits  
the power dissipation in the IGBT even with insufficient  
gate drive voltage. Another more subtle advantage of  
the desaturation detection method is that power dissi-  
pation in the IGBT is monitored, while the current sense  
method relies on a preset current threshold to predict  
the safe limit of operation. Therefore, an overly- conser-  
vative overcurrent threshold is not needed to protect  
the IGBT.  
Recommended Application Circuit  
The HCPL-316J has both inverting and non-inverting  
gate control inputs, an active low reset input, and an  
open collector fault output suitable for wired ‘OR’ appli-  
cations. The recommended application circuit shown in  
Figure 62 illustrates a typical gate drive implementation  
using the HCPL-316J.  
A circuit providing fast local fault detection and shut-  
down is an ideal solution, but the number of required  
components, board space consumed, cost, and complex-  
ity have until now limited its use to high performance  
drives. The features which this circuit must have are high  
speed, low cost, low resolution, low power dissipation,  
and small size.  
The four supply bypass capacitors (0.1 µF) provide the  
large transient currents necessary during a switching  
transition. Because of the transient nature of the charg-  
ing currents, a low current (5 mA) power supply suffices.  
The desat diode and 100 pF capacitor are the necessary  
external components for the fault detection circuitry.  
The gate resistor (10 Ω) serves to limit gate charge cur-  
rent and indirectly control the IGBT collector voltage  
rise and fall times. The open collector fault output has  
a passive 3.3 kΩ pull-up resistor and a 330 pF filtering  
Applications InformationThe HCPL-316J satisfies these cri-  
teria by combining a high speed, high output current  
driver, high voltage optical isolation between the input  
and output, local IGBT desaturation detection and shut  
down, and an optically isolated fault status feedback sig-  
nal into a single 16-pin surface mount package.  
The fault detection method, which is adopted in the  
HCPL-316J, is to monitor the saturation (collector) volt-  
age of the IGBT and to trigger a local fault shutdown se-  
quence if the collector voltage exceeds a predetermined  
threshold. A small gate discharge device slowly reduces  
the high short circuit IGBT current to prevent damaging  
voltage spikes. Before the dissipated energy can reach  
destructive levels, the IGBT is shut off. During the off  
state of the IGBT, the fault detect circuitry is simply dis-  
abled to prevent false ‘faultsignals.  
capacitor. A 47 kΩ pulldown resistor on V  
more predictable high level output voltage (V ). In this  
application, the IGBT gate driver will shut down when a  
fault is detected and will not resume switching until the  
microcontroller applies a reset signal.  
provides a  
OH  
OUT  
21  
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