AUSTIN SEMICONDUCTOR, INC.
ADVANCE INFORMATION
nvSRAM
AS8nvLC512K32
Austin Semiconductor, Inc.
Data Retention and Endurance
Parameter
DATAR
Description
DataꢀRetention
NonvolatileꢀSTOREꢀOperation
Min
20
Unit
Years
Cycles
NVC
200
Capacitance
In the following table, the capacitance parameters are listed. 12
Parameter
CIN
Description
TestꢀConditions
Min
50
Unit
pF
InputꢀCapacitanceꢀ(Addr,ꢀOE\,ꢀHSB\)
InputꢀCapacitanceꢀ(CE\1Ͳ4,ꢀWE\1Ͳ4
TAꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz,
VCCꢀ=ꢀ0ꢀtoꢀ3.0V
CIN
20
pF
COUT(DQ)
I/OꢀCapacitance
25
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed. 12
Parameter
Description
ThermalꢀResistanceꢀ
(JunctionꢀtoꢀAmbient)
ThermalꢀResistanceꢀ
(JunctionꢀtoꢀCase)
TestꢀConditions
44ͲTSOPꢀII 44ͲGullwing Unit
oC/W
ȺJA
Testꢀconditionsꢀfollowꢀstandardꢀtestꢀmethods
andꢀproceduresꢀforꢀmeasuringꢀthermal
impedance,ꢀinꢀaccordanceꢀwithꢀEIA/JESD51.
TBD
TBD
oC/W
ȺJC
TBD
TBD
AC Test Loads
577:
for tri-state specs
577:
3.0V
OUTPUT
3.0V
OUTPUT
30 pF
R1
R1
R2
R2
5 pF
789:
789:
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
12. These parameters are guaranteed but not tested.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8nvLC512K32
Rev. 0.0 08/09
8
AUSTIN [ AUSTIN SEMICONDUCTOR ]
