AUSTIN SEMICONDUCTOR, INC.
ADVANCE INFORMATION
nvSRAM
AS8nvLC512K32
Austin Semiconductor, Inc.
AutoStore/Power Up RECALL
20ꢀns
25ꢀns
45ꢀns
Parameters
19
tHRECALLꢀ
tSTOREꢀ20
21
tDELAYꢀ
Description
PowerꢀUpꢀRECALLꢀDuration
STOREꢀCycleꢀDuration
Min
Max
Min
Max
Min
Max Unit
20
10
20
20
10
25
ms
ms
ns
V
10
TimeꢀAllowedꢀtoꢀCompleteꢀSRAMꢀCycle
LowꢀVoltageꢀTriggerꢀLevel
VCCꢀRiseꢀTime
20
25
VSWITCH
2.65
2.65
2.65
tVCCRISE
ꢀ12
VHDIS
150
150
150
μs
V
HSB\ꢀOutputꢀDriverꢀDisableꢀVoltage
HSB\ꢀToꢀOutputꢀActiveꢀTime
HSB\ꢀHighꢀActiveꢀTime
1.9
5
1.9
5
1.9
5
tLZHSB
tHHHD
μs
ns
500
500
500
Switching Waveforms
AutoStore or Power Up RECALL22
VSWITCH
VHDIS
Note20
Note20
VVCCRISE
tSTORE
tSTORE
Note23
tHHHD
tHHHD
HSB OUT
Autostore
tDELAY
tLZHSB
tLZHSB
tDELAY
POWER-
UP
RECALL
tHRECALL
tHRECALL
Read & Write
Inhibited
(
RWI)
Read & Write
Read & Write
POWER-UP
RECALL
BROWN
OUT
Autostore
POWER
DOWN
Autostore
POWER-UP
RECALL
Notes
19. tHRECALL starts from the time VCC rises above VSWITCH.
20. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.
21. On a Hardware STORE, Software Store / Recall, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be
enabled for time tDELAY.
22. Read and write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.
23. HSB\ pin is driven HIGH to VCC only by internal 100 kOhm resistor, HSB\ driver is disabled.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8nvLC512K32
Rev. 0.0 08/09
12