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AS8NVLC512K32QC-20XT 参数 Datasheet PDF下载

AS8NVLC512K32QC-20XT图片预览
型号: AS8NVLC512K32QC-20XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32模块的nvSRAM 3.3V高速SRAM与非易失性存储 [512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage]
分类和应用: 存储静态存储器
文件页数/大小: 17 页 / 362 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SEMICONDUCTOR, INC.  
ADVANCE INFORMATION  
nvSRAM  
AS8nvLC512K32  
Austin Semiconductor, Inc.  
Any Pin to Ground Potential............................–2.0V to Vcc + 2.0V  
Package Power Dissipation  
Capability (TA = 25°C) ...........................................................1.0W  
Surface Mount Pb Soldering  
Temperature (3 Seconds)......................................................+260°C  
DC Output Current (1 output at a time, 1s duration) ..............15 mA  
Static Discharge Voltage .................................................... > 2001V  
(per MIL-STD-883, Method 3015)  
Maximum Ratings  
Exceeding maximum ratings may impair the useful life of the  
device. These user guidelines are not tested.  
Storage Temperature .............................................–65°C to +150°C  
MaximumAccumulated Storage Time  
At 150°CAmbient Temperature...............................1000h  
At 85°C Ambient Temperature.............................20Years  
Ambient Temperature with  
Power Applied ......................................................–55°C to +125°C  
Supply Voltage on Vcc Relative to GND................... –0.5V to 4.1V  
VoltageApplied to Outputs  
in High-Z State ............................................... –0.5V to Vcc + 0.5V  
Input Voltage .................................................. –0.5V to Vcc + 0.5V  
Transient Voltage (<20 ns) on  
Latch Up Current............................................................. > 200 mA  
Operating Range  
Range  
AmbientTemperature  
Vcc  
ꢀͲ55oCto+125oC  
Military  
3.0Vto3.6V  
3.0Vto3.6V  
ꢀͲ40oCto+85oC  
Industrial  
DC Electrical Characteristics  
Over the Operating Range (VCC = 3.0V to 3.6V)  
Description  
TestConditions  
Parameter  
Min Max Unit  
tRC=20ns  
tRC=25ns  
tRC=45ns  
320mAꢀꢀꢀ  
320mAꢀꢀꢀ  
260mA  
280mAꢀꢀꢀ  
280mAꢀꢀꢀ  
210 mA  
Military  
ICC1  
AverageVCCCurrent  
Valuesobtainedwithoutoutputloads(IOUT=0mA)  
Industrial  
AverageVCCCurrentꢀ  
duringSTORE  
AllInputsDon’tCare,VCC=Max  
AveragecurrentfordurationtSTORE  
ICC2  
40 mA  
140 mA  
20 mA  
20 mA  
AverageVccCurrentatꢀ  
tRC=200ns,3V,25°C  
typical  
AllI/PcyclingatCMOSlevels.  
Valuesobtainedwithoutoutputloads(IOUT=0mA).  
9
ICC3ꢀ  
AverageVCAPCurrent  
duringAutoStoreCycle  
AllInputsDon’tCare,VCC=Max  
AveragecurrentfordurationtSTORE  
ICC4  
CE\шꢀ(VCC0.2V).AllothersVINꢀчꢀ0.2Vorꢀшꢀ(VCC0.2V).Standby  
currentlevelafternonvolatilecycleiscomplete.  
Inputsarestatic.f=0MHz.  
ISB  
VCCStandbyCurrent  
InputLeakageCurrent  
(exceptHSB\)  
InputLeakageCurrent  
(forHSB\)  
VCC=Max,VSSꢀчꢀVINꢀчꢀVCC  
Ͳ5  
5
μA  
10  
IIXꢀ  
VCC=Max,VSSꢀчꢀVINꢀчꢀVCC  
Ͳ400 10 μA  
Ͳ10 10 μA  
VCC=Max,VSSꢀчꢀVOUTꢀчꢀVCC,CE\orOE\ꢀшꢀVIHorBHE\/BLE\ꢀшꢀVIH  
orWE\ꢀчꢀVIL  
OffͲStateOutput  
LeakageCurrent  
IOZ  
V
CC +ꢀ  
0.3  
VIH  
VIL  
InputHIGHVoltage  
2.2  
V
V
VSSꢀͲꢀ  
0.3  
InputLOWVoltage  
0.8  
OutputHIGHVoltage  
OutputLOWVoltage  
StorageCapacitor  
VOH  
VOL  
IOUT=–2mA  
2.4  
V
V
IOUT=4mA  
0.4  
11  
BetweenVCAPpinandVSS,6.3VRated  
80 180 μF  
VCAPꢀ  
Notes  
9. Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and VCC = 3V. Not  
100% tested.  
10. The HSB\ pin has IOUT = -8 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are  
valid. This parameter is characterized but not tested.  
11. VCAP (storage capacitor) nominal value is 88 uF total cap.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8nvLC512K32  
Rev. 0.0 08/09  
7