16 Meg FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICSAND RECOMMENDED AC OPERATING CONDITIONS1,2
(CONTINUED)
-60
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNITS
NOTES
Data set-up time
Data hold time
Refresh period
0
0
ns
9
tDS
10
12
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
9
tDH
tREF
32
32
Write command set-up time
0
0
7
7
7
7
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPA
tPC
CAS\ to W\ delay time
40
85
55
60
5
45
90
60
65
5
RAS\ to W\ delay time
Column address to W\ delay time
CAS\ precharge to W\ delay time
CAS\ set-up time (CAS\-before-RAS\ refresh)
CAS\ hold time (CAS\-before-RAS\ refresh)
RAS\ to CAS\ precharge time
10
5
15
5
Access time from CAS\ precharge
Fast Page cycle time
35
40
3
40
85
10
60
35
45
95
10
70
40
Fast Page read-modify-write cycle time
CAS\ precharge time (Fast Page Cycle)
RAS\ pulse width (Fast Page Cycle)
RAS\ hold time from CAS\ precharge
OE\ access time
tPRWC
tCP
100K
15
100K
17
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tWTS
tWTH
tWRP
tWRH
tRASS
tRPS
tCHS
OE\ to data delay
15
0
17
0
Output buffer turn off delay time from OE\
OE\ command hold time
15
17
6
15
17
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W\ to RAS\ precharge time (C\-B-R\ refresh)
W\ to RAS\ hold time (C\-B-R\ refresh)
RAS\ pulse width (C\-B-R\ self refresh)
RAS\ precharge time (C\-B-R\ self refresh)
CAS\ hold time (C\-B-R\ self refresh)
10
10
11
11
10
10
10
10
10
10
100
110
-50
110
120
-50
13, 14, 15
13, 14, 15
13, 14, 15
AS4C4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 06/05
5
AUSTIN [ AUSTIN SEMICONDUCTOR ]
