16 Meg FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Leakage Current (any input 0<VIN<VIN+0.5V,
all other input pins not under test = 0 Volt)
Output Leakage Current
-5
5
uA
II(L)
-5
5
uA
IO(L)
(Data out is disabled, 0V<VOUT<VCC
Output High Voltage (IOH = -5mA)
Output Low Voltage (IOL = 4.2mA)
)
2.4
---
---
V
V
VOH
VOL
0.4
MAX
SYMBOL
PARAMETERS
-60
-70
UNITS
Operating Current (RAS\ and CAS\, Address cycling @ tRC = MIN),
Power = Don't Care
110
100
mA
ICC1
*
Standby Current (RAS\ = CAS\ = W\ = VIH)
Power = Normal L
3
3
mA
mA
ICC2
RAS\-only Refresh Current (CAS\ = VIH, RAS\, Address cycling @
tRC = MIN), Power = Don't Care
110
100
ICC3
*
Fast Page Mode Current (RAS\ = VIL, CAS\, Address cycling @
tPC = MIN), Power = Don't Care
90
80
mA
ICC4
*
Standby Current (RAS\ = CAS\ = W\ = Vcc - 0.2V)
Power = Normal L
CAS\-BEFORE-RAS\ Refresh Current (RAS\ and CAS\ cycling @
ICC5
ICC6
2
2
mA
mA
110
100
*
tRC = MIN), Power = Don't Care
Battery back-up current, Average power supply current, Battery back-
up mode, Input high voltage (VIH) = VCC - 0.2V, Input low voltage
ICC7
1
1
1
1
mA
(VIL) = 0.2V, CAS\ = 0.2V, DQ = Don't care, tRC = 62.5us (2K/L-ver),
tRAS = tRAS min ~ 300ns
Self Refresh Current, RAS\ = CAS\ = 0.2V, W\ = OE\ = A0 ~ A11 =
VCC - 0.2V or 0.2V, DQ0 ~ DQ3 = VCC - 0.2V, 0.2V or Open
ICCS
NOTES:
*ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an
average current. In ICC1, ICC3, and ICC6 address can be changed maximum once while RAS\ = VIL. In ICC4, address can be changed maximum once within one
fast page mode cycle time, tPC
.
AS4C4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 06/05
3
AUSTIN [ AUSTIN SEMICONDUCTOR ]
