16 Meg FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
CAPACITANCE (TA < +25oC ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MAX
UNITS
Input capacitance (A0 - A11)
C
C
C
6
pF
IN1
IN2
DQ
Input capacitance (RAS\, CAS\, W\, OE\)
Output capacitance (DQ0 - DQ3)
8
8
pF
pF
ELECTRICAL CHARACTERISTICSAND RECOMMENDED AC OPERATING CONDITIONS1,2
(-55oC<TA<+125oC & -40oC<TA<+85oC; Vcc = 5V +10%; VIH/VIL = 2.4/0.8V; VOH/VOL = 2.4/0.4V)
-60
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNITS
NOTES
Random read or write cycle time
110
130
ns
tRC
Read-modify-write cycle time
Access time from RAS\
155
185
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRWC
tRAC
tCAC
tAA
60
15
30
70
20
35
3, 4, 10
Access time from CAS\
3, 4, 5
Access time from column address
CAS\ to output in Low-Z
3, 10
0
0
0
0
3
6
2
tCLZ
tOFF
tT
Output buffer turn-off delay
Transition time (raise and fall)
RAS\ precharge time
15
50
15
50
3
3
40
60
15
60
15
20
15
5
50
70
17
65
18
25
17
5
tRP
RAS\ pulse width
10K
10K
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
RAS\ hold time
CAS\ hold time
CAS\ pulse width
10K
45
10K
50
RAS\ to CAS\ delay time
4
RAS\ to column address delay time
CAS\ to RAS\ precharge time
Row address set-up time
30
35
10
0
0
Row address hold time
10
0
10
0
Column address set-up time
Column address hold time
Column address to RAS\ lead time
Read command set-up time
Read command hold time referenced to CAS\
Read command hold time referenced to RAS\
Write command hold time
Write command pulse width
Write command to RAS\ lead time
Write command to CAS\ lead time
10
30
0
12
35
0
0
0
8
8
0
0
10
10
15
15
12
12
17
17
tRWL
tCWL
AS4C4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 06/05
4
AUSTIN [ AUSTIN SEMICONDUCTOR ]
