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AS4C4M4 参数 Datasheet PDF下载

AS4C4M4图片预览
型号: AS4C4M4
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×4 CMOS的DRAM快速页面模式, 5伏 [4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT]
分类和应用: 动态存储器
文件页数/大小: 19 页 / 2644 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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16 Meg FPM DRAM  
AS4C4M4  
Austin Semiconductor, Inc.  
NOTES (continued):  
8. Either tRCH or tRRH must be satisfied for a read cycle.  
9. These parameters are referenced to CAS\ falling edge in early write cycles and to W\ falling edge in read-modify-write  
cycles.  
10. Operation within the tRAD(MAX) limit insures that tRAC(MAX) can be met. tRAD(MAX) is specified as a reference point only.  
If tRAD is greater than the specified tRAS(MAX) limit, then access time is controlled by tAA.  
11. These specifications are applied in the test mode.  
12. In test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters  
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.  
13. If tRASS > 100 us, then RAS\ precharge time must use tRPS instead of tRP.  
14. For RAS\-only refresh and burst CAS\-before-RAS\ refresh mode, 2048 cycles of burst refresh must be executed within  
32ms before and after self refresh, in order to meet refresh specification.  
15. For distributed CAS\-before-RAS\ with 15.6us interval CAS\-before-RAS\ refresh should be executed with in 15.6us  
immediately before and after self refresh in order to meet refresh specification.  
READ CYCLE  
AS4C4M4  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 1.1 06/05  
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