16 Meg FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
RAS\
Control
Clocks
VSS
CAS\
W\
VBB Generator
Data In
Buffer
Row Decoder
Refresh Timer
Refresh Control
Refresh Counter
DQ0
to
DQ3
Memory Array
4,194,304 x 4
Cells
Row Address Buffer
Col. Address Buffer
(A0 - A10)
(A0 - A10)
Data Out
Buffer
Column Decoder
OE\
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability. Junction temperature depends
upon package type, cycle time, loading, ambient temperature
and airflow, and humidity (plastics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to VCC (VIN, VOUT) .....-1.0V to +7.0V
Voltage on VCC supply relative to VSS (VCC).........-1.0V to +7.0V
Storage Temperature (Tstg)................................-55°C to +150°C
Power Dissipation (PD).............................................................1W
Short Circuit Output Current (IOS Address).........................50mA
ELECTRICAL CHARACTERISTICSAND RECOMMENDED OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Supply Voltage
4.5
5.0
5.5
V
VCC
VCC + 0.51
0.8
Input High Voltage
Input Low Voltage
NOTES:
2.4
---
---
V
V
VIH
VIL
-0.52
1. VCC + 2.0V/20ns, Pulse width is measured at VCC
2. -2.0V/20ns, Pulse width is measured at VSS
AS4C4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 06/05
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
