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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
Read Operations  
Parameter  
Speed Options  
JEDEC  
Std  
Description  
Read Cycle Time1  
Test Setup  
Min  
70  
55  
Unit  
tAVAV  
tRC  
70  
55  
CE#=VIL,  
OE#=VIL  
tAVQV  
tACC  
Address to Output Delay  
Max  
70  
55  
tELQV  
tGLQV  
tEHQZ  
tGHQZ  
tCE  
tOE  
Chip Enable to Output Delay  
OE#=VIL  
Max  
Max  
Max  
Max  
Min  
Min  
Min  
70  
30  
55  
30  
Output Enable to Output Delay  
Chip Enable to Ouput High Z1  
tDF  
16  
16  
20  
0
ns  
Output Enable to Output High Z1  
Latency Between Read and Write Operations  
tDF  
tSR/W  
Read  
Output Enable  
Hold Time1  
tOEH  
10  
Toggle and Data# Polling  
Output Hold Time From Addresses, CE# or  
OE#, Whichever Occurs First1  
tAXQX  
tOH  
Min  
0
Notes:  
1. Not 100% Tested  
2. See Figure 10, on page 28 and Table 11 on page 28 for test specifications.  
tRC  
Addresses Stable  
tACC  
Addresses  
CE#  
tDF  
tOE  
OE#  
tSR/W  
tOEH  
WE#  
tCE  
tOH  
HIGH Z  
HIGH Z  
Output Valid  
Outputs  
RESET#  
RY/BY#  
0 V  
Figure 12. Read Operations Timings  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
29  
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