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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
TEST CONDITIONS  
3.3 V  
2.7 k:  
Device  
Under  
Test  
C
6.2 k:  
L
Note: Diodes are IN3064 or equivalent  
Figure 10. Test Setup  
Table 11: Test Specifications  
Test Condition  
70  
55  
1 TTL gate  
30  
Unit  
Output Load  
Output Load Capacitance, CL (including jig capacitance)  
Input Rise and Fall Times  
pF  
ns  
5
0.0 or VCC  
0.5 VCC  
Input Pulse Levels  
V
Input timing measurement reference levels  
Output timing meausrement reference levels  
0.5 VCC  
Key to Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
VCC  
0.5 VCC  
0.5 VCC  
Input  
Measurement Level  
Output  
0.0 V  
Figure 11. Input Waveforms and Measurement Levels  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
28  
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