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AM29LV800DT-70EC 参数 Datasheet PDF下载

AM29LV800DT-70EC图片预览
型号: AM29LV800DT-70EC
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 51 页 / 1726 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
The system can monitor DQ3 to determine if the  
When the Erase Suspend command is written  
during a sector erase operation, the device  
requires a maximum of 20 µs to suspend the  
erase operation. However, when the Erase  
Suspend command is written during the sector  
erase time-out, the device immediately termi-  
nates the time-out period and suspends the  
erase operation.  
sector erase timer has timed out. (See the  
“DQ3: Sector Erase Timer” section.) The time-  
out begins from the rising edge of the final WE#  
pulse in the command sequence.  
Once the sector erase operation has begun, only  
the Erase Suspend command is valid. All other  
commands are ignored. Note that a hardware  
reset during the sector erase operation imme-  
diately terminates the operation. The Sector  
Erase command sequence should be reinitiated  
once the device has returned to reading array  
data, to ensure data integrity.  
After the erase operation has been suspended,  
the system can read array data from or program  
data to any sector not selected for erasure. (The  
device “erase suspends” all sectors selected for  
erasure.) Normal read and write timings and  
command definitions apply. Reading at any  
address within erase-suspended sectors pro-  
duces status data on DQ7–DQ0. The system can  
use DQ7, or DQ6 and DQ2 together, to deter-  
mine if a sector is actively erasing or is erase-  
suspended. See “Write Operation Status” for  
information on these status bits.  
When the Embedded Erase algorithm is com-  
plete, the device returns to reading array data  
and addresses are no longer latched. The  
system can determine the status of the erase  
operation by using DQ7, DQ6, DQ2, or RY/BY#.  
Refer to “Write Operation Status” for informa-  
tion on these status bits.  
After an erase-suspended program operation is  
complete, the system can once again read array  
data within non-suspended sectors. The system  
can determine the status of the program opera-  
tion using the DQ7 or DQ6 status bits, just as in  
the standard program operation. See “Write  
Operation Status” for more information.  
Figure 1 illustrates the algorithm for the erase  
operation. Refer to the Erase/Program Opera-  
tions tables in the “AC Characteristics” section  
for parameters, and to Figure 1 for timing dia-  
grams.  
Erase Suspend/Erase Resume Commands  
The system may also write the autoselect  
command sequence when the device is in the  
Erase Suspend mode. The device allows reading  
autoselect codes even at addresses within  
erasing sectors, since the codes are not stored  
in the memory array. When the device exits the  
autoselect mode, the device reverts to the Erase  
Suspend mode, and is ready for another valid  
operation. See “Autoselect Command  
Sequence” for more information.  
The Erase Suspend command allows the system  
to interrupt a sector erase operation and then  
read data from, or program data to, any sector  
not selected for erasure. This command is valid  
only during the sector erase operation, including  
the 50 µs time-out period during the sector  
erase command sequence. The Erase Suspend  
command is ignored if written during the chip  
erase operation or Embedded Program algo-  
rithm. Writing the Erase Suspend command  
during the Sector Erase time-out immediately  
terminates the time-out period and suspends  
the erase operation. Addresses are  
“don’t-cares” when writing the Erase Suspend  
command.  
The system must write the Erase Resume  
command (address bits are “don’t care”) to exit  
the erase suspend mode and continue the sector  
erase operation. Further writes of the Resume  
command are ignored. Another Erase Suspend  
command can be written after the device has  
resumed erasing.  
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Am29LV800D  
Am29LV800D_00_A4_E January 21, 2005  
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