P R E L I M I N A R Y
the proper signals to the control pins to prevent
unintentional writes when VCC is greater than
VLKO
Hardware Data Protection
The command sequence requirement of unlock
cycles for programming or erasing provides data
protection against inadvertent writes (refer to
Table 5 for command definitions). In addition,
the following hardware data protection mea-
sures prevent accidental erasure or program-
ming, which might otherwise be caused by
spurious system level signals during VCC
power-up and power-down transitions, or from
system noise.
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE# = VIL, CE# = VIH or WE# = VIH. To initiate
a write cycle, CE# and WE# must be a logical
zero while OE# is a logical one.
Low V
Write Inhibit
CC
Power-Up Write Inhibit
When VCC is less than VLKO, the device does not
accept any write cycles. This protects data
during VCC power-up and power-down. The
command register and all internal pro-
gram/erase circuits are disabled, and the device
resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide
If WE# = CE# = VIL and OE# = VIH during
power up, the device does not accept com-
mands on the rising edge of WE#. The internal
state machine is automatically reset to reading
array data on power-up.
Command Definitions
Writing specific address and data commands or
sequences into the command register initiates
device operations. Table 5 defines the valid reg-
ister command sequences. Writing incorrect
address and data values or writing them in
the improper sequence resets the device to
reading array data.
DQ5 goes high, or while in the autoselect mode.
See the “Reset Command” section, next.
See also “Requirements for Reading Array Data”
in the “Device Bus Operations” section for more
information. The Read Operations table provides
the read parameters, and Figure 1 shows the
timing diagram.
All addresses are latched on the falling edge of
WE# or CE#, whichever happens later. All data
is latched on the rising edge of WE# or CE#,
whichever happens first. Refer to the appro-
priate timing diagrams in the “AC Characteris-
tics” section.
Reset Command
Writing the reset command to the device resets
the device to reading array data. Address bits
are don’t care for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
reading array data. Once erasure begins, how-
ever, the device ignores reset commands until
the operation is complete.
Reading Array Data
The device is automatically set to reading array
data after device power-up. No commands are
required to retrieve data. The device is also
ready to read array data after completing an
Embedded Program or Embedded Erase algo-
rithm.
The reset command may be written between the
sequence cycles in a program command
sequence before programming begins. This
resets the device to reading array data (also
applies to programming in Erase Suspend
mode). Once programming begins, however, the
device ignores reset commands until the opera-
tion is complete.
After the device accepts an Erase Suspend com-
mand, the device enters the Erase Suspend
mode. The system can read array data using the
standard read timings, except that if it reads at
an address within erase-suspended sectors, the
device outputs status data. After completing a
programming operation in the Erase Suspend
mode, the system may once again read array
data with the same exception. See “Erase Sus-
pend/Erase Resume Commands” for more infor-
mation on this mode.
The reset command may be written between the
sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the
reset command must be written to return to
reading array data (also applies to autoselect
during Erase Suspend).
The system must issue the reset command to
re-enable the device for reading array data if
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