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AM29LV800DT-70EC 参数 Datasheet PDF下载

AM29LV800DT-70EC图片预览
型号: AM29LV800DT-70EC
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 51 页 / 1726 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
the proper signals to the control pins to prevent  
unintentional writes when VCC is greater than  
VLKO  
Hardware Data Protection  
The command sequence requirement of unlock  
cycles for programming or erasing provides data  
protection against inadvertent writes (refer to  
Table 5 for command definitions). In addition,  
the following hardware data protection mea-  
sures prevent accidental erasure or program-  
ming, which might otherwise be caused by  
spurious system level signals during VCC  
power-up and power-down transitions, or from  
system noise.  
.
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE#,  
CE# or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of  
OE# = VIL, CE# = VIH or WE# = VIH. To initiate  
a write cycle, CE# and WE# must be a logical  
zero while OE# is a logical one.  
Low V  
Write Inhibit  
CC  
Power-Up Write Inhibit  
When VCC is less than VLKO, the device does not  
accept any write cycles. This protects data  
during VCC power-up and power-down. The  
command register and all internal pro-  
gram/erase circuits are disabled, and the device  
resets. Subsequent writes are ignored until VCC  
is greater than VLKO. The system must provide  
If WE# = CE# = VIL and OE# = VIH during  
power up, the device does not accept com-  
mands on the rising edge of WE#. The internal  
state machine is automatically reset to reading  
array data on power-up.  
Command Definitions  
Writing specific address and data commands or  
sequences into the command register initiates  
device operations. Table 5 defines the valid reg-  
ister command sequences. Writing incorrect  
address and data values or writing them in  
the improper sequence resets the device to  
reading array data.  
DQ5 goes high, or while in the autoselect mode.  
See the “Reset Command” section, next.  
See also “Requirements for Reading Array Data”  
in the “Device Bus Operations” section for more  
information. The Read Operations table provides  
the read parameters, and Figure 1 shows the  
timing diagram.  
All addresses are latched on the falling edge of  
WE# or CE#, whichever happens later. All data  
is latched on the rising edge of WE# or CE#,  
whichever happens first. Refer to the appro-  
priate timing diagrams in the “AC Characteris-  
tics” section.  
Reset Command  
Writing the reset command to the device resets  
the device to reading array data. Address bits  
are don’t care for this command.  
The reset command may be written between the  
sequence cycles in an erase command sequence  
before erasing begins. This resets the device to  
reading array data. Once erasure begins, how-  
ever, the device ignores reset commands until  
the operation is complete.  
Reading Array Data  
The device is automatically set to reading array  
data after device power-up. No commands are  
required to retrieve data. The device is also  
ready to read array data after completing an  
Embedded Program or Embedded Erase algo-  
rithm.  
The reset command may be written between the  
sequence cycles in a program command  
sequence before programming begins. This  
resets the device to reading array data (also  
applies to programming in Erase Suspend  
mode). Once programming begins, however, the  
device ignores reset commands until the opera-  
tion is complete.  
After the device accepts an Erase Suspend com-  
mand, the device enters the Erase Suspend  
mode. The system can read array data using the  
standard read timings, except that if it reads at  
an address within erase-suspended sectors, the  
device outputs status data. After completing a  
programming operation in the Erase Suspend  
mode, the system may once again read array  
data with the same exception. See “Erase Sus-  
pend/Erase Resume Commands” for more infor-  
mation on this mode.  
The reset command may be written between the  
sequence cycles in an autoselect command  
sequence. Once in the autoselect mode, the  
reset command must be written to return to  
reading array data (also applies to autoselect  
during Erase Suspend).  
The system must issue the reset command to  
re-enable the device for reading array data if  
January 21, 2005 Am29LV800D_00_A4_E  
Am29LV800D  
17  
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