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AM29LV800DT-70EC 参数 Datasheet PDF下载

AM29LV800DT-70EC图片预览
型号: AM29LV800DT-70EC
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 51 页 / 1726 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
tion. The Chip Erase command sequence should  
be reinitiated once the device has returned to  
reading array data, to ensure data integrity.  
START  
The system can determine the status of the  
erase operation by using DQ7, DQ6, DQ2, or  
RY/BY#. See “Write Operation Status” for infor-  
mation on these status bits. When the  
Embedded Erase algorithm is complete, the  
device returns to reading array data and  
addresses are no longer latched.  
Write Program  
Command Sequence  
Data Poll  
from System  
Figure 1 illustrates the algorithm for the erase  
operation. See the Erase/Program Operations  
tables in “AC Characteristics” for parameters,  
and to Figure 1 for timing diagrams.  
Embedded  
Program  
algorithm  
in progress  
Verify Data?  
Yes  
Sector Erase Command Sequence  
No  
Sector erase is a six bus cycle operation. The  
sector erase command sequence is initiated by  
writing two unlock cycles, followed by a set-up  
command. Two additional unlock write cycles  
are then followed by the address of the sector to  
be erased, and the sector erase command. Table  
5 shows the address and data requirements for  
the sector erase command sequence.  
No  
Increment Address  
Last Address?  
Yes  
The device does not require the system to pre-  
program the memory prior to erase. The  
Embedded Erase algorithm automatically pro-  
grams and verifies the sector for an all zero data  
pattern prior to electrical erase. The system is  
not required to provide any controls or timings  
during these operations.  
Programming  
Completed  
Note: See Table 5 for program command sequence.  
After the command sequence is written, a sector  
erase time-out of 50 µs begins. During the time-  
out period, additional sector addresses and  
sector erase commands may be written.  
Loading the sector erase buffer may be done in  
any sequence, and the number of sectors may  
be from one sector to all sectors. The time  
between these additional cycles must be less  
than 50 µs, otherwise the last address and  
command might not be accepted, and erasure  
may begin. It is recommended that processor  
interrupts be disabled during this time to ensure  
all commands are accepted. The interrupts can  
be re-enabled after the last Sector Erase  
command is written. If the time between addi-  
tional sector erase commands can be assumed  
to be less than 50 µs, the system need not  
monitor DQ3. Any command other than  
Sector Erase or Erase Suspend during the  
time-out period resets the device to  
reading array data. The system must rewrite  
the command sequence and any additional  
sector addresses and commands.  
Figure 1. Program Operation  
Chip Erase Command Sequence  
Chip erase is a six bus cycle operation. The chip  
erase command sequence is initiated by writing  
two unlock cycles, followed by a set-up com-  
mand. Two additional unlock write cycles are  
then followed by the chip erase command,  
which in turn invokes the Embedded Erase algo-  
rithm. The device does not require the system  
to preprogram prior to erase. The Embedded  
Erase algorithm automatically preprograms and  
verifies the entire memory for an all zero data  
pattern prior to electrical erase. The system is  
not required to provide any controls or timings  
during these operations. Table 5 shows the  
address and data requirements for the chip  
erase command sequence.  
Any commands written to the chip during the  
Embedded Erase algorithm are ignored. Note  
that a hardware reset during the chip erase  
operation immediately terminates the opera-  
January 21, 2005 Am29LV800D_00_A4_E  
Am29LV800D  
19  
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