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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
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Table 5. Flashrite Programming Algorithm  
Command  
Bus Operations  
Standby  
Comments  
(Note 1)  
PPH  
Wait for V Ramp to V  
PP  
Initialize Pulse counter  
Program Setup  
Program  
Data = 40h  
Write  
Valid Address/Data  
Standby  
Write  
Duration of Programming Operation (t  
)
WHWH1  
Program-Verify (Note 2)  
Data = C0h Stops Program Operation  
Standby  
Read  
Write Recovery Time before Read = 6 µs  
Read Byte to Verify Programming  
Standby  
Write  
Compare Data Output to Data Expected  
Reset  
Data = FFh, resets the register for read operations.  
Wait for V Ramp to V (Note 1)  
Standby  
PP  
PPL  
Notes:  
1. See AC and DC Characteristics for values of V parameters. The V power supply can be hard-wired to the device or  
PP  
PP  
switchable. When V is switched, V  
may be ground, no connect with a resistor tied to ground, or less than V + 2.0 V.  
PP  
PPL  
CC  
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register  
is written with the read command.  
Am28F256  
17  
 
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