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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
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The device contains an Auto Select operation to sup-  
plement traditional PROM programming methodology.  
The operation is initiated by writing 80h or 90h into the  
command register. Following this command, a read  
cycle address 0000h retrieves the manufacturer code  
of 01h. A read cycle from address 0001h returns the  
device code. To terminate the operation, it is necessary  
to write another valid command, such as Reset (FFh),  
into the register.  
Auto Select Command  
AMD’s Flash memories are designed for use in applica-  
tions where the local CPU alters memory contents. Ac-  
cordingly, manufacturer and device codes must be  
accessible while the device resides in the target sys-  
tem. PROM programmers typically access the signa-  
ture codes by raising A9 to a high voltage. However,  
multiplexing high voltage onto address lines is not a  
generally desired system design practice.  
20  
Am28F256  
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