S2046/S2050
GIGABIT ETHERNET CHIPSET
Table 8. Absolute Maximum Ratings
The following are the absolute maximum device stress ratings. Stresses beyond those listed may cause
permanentdamagetothedevice. Thesearestressratingsonly. Operationofthedeviceattheseoranyother
conditions beyond those indicated in the electrical characteristics section of this document is not implied.
Parameter
Case Temperature Under Bias
Junction Temperature Under Bias
Storage Temperature
Min
-55
-55
-65
-0.5
Typ
Max Units
125
150
150
+7.0
˚ C
˚ C
˚ C
V
Voltage on VCC with Respect to Ground
VCC
+.6V
Voltage on any TTL Input Pin
-0.7
0
V
ECLVCC
Voltage on any PECL Input Pin
TTL Output Sink Current
V
8
8
mA
mA
mA
TTL Output Source Current
High Speed PECL Output Source Current
50
Electrostatic Discharge (ESD) Ratings.
The S2046 and S2050 are rated to the following ESD voltages based on the human body model. All
pins are rated above 500 V.
Table 9. Recommended Operating Conditions
Parameter
Min
Typ
Max Units
Ambient Temperature Under Bias
Junction Temperature Under Bias
0
70
˚ C
˚ C
130
Voltage on TTLVCC with Respect to GND
5V Operation
3.3V Operation
4.75
3.13
5.0
3.3
5.25
3.47
V
V
Voltage on any TTL Input Pin
0
5.25
3.47
V
V
Voltage on ECLVCC with Respect to GND
3.13
3.3
ECLVCC
ECLVCC
Voltage on any PECL Input Pin
V
-2.0
March 29, 2000 / Revision B
13
AMCC [ APPLIED MICRO CIRCUITS CORPORATION ]
