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EPM1270GT144I4N 参数 Datasheet PDF下载

EPM1270GT144I4N图片预览
型号: EPM1270GT144I4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 8.1ns, 980-Cell, CMOS, PQFP144, 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, TQFP-144]
分类和应用: LTE输入元件可编程逻辑
文件页数/大小: 108 页 / 1342 K
品牌: ALTERA [ ALTERA CORPORATION ]
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DC and Switching Characteristics  
Table 5–2. MAX II Device Recommended Operating Conditions (Part 2 of 2)  
Symbol  
Parameter  
Conditions  
Minimum Maximum  
Unit  
TJ  
Operating junction temperature  
0
85  
°C  
°C  
°C  
Commercial range (5)  
Industrial range  
–40  
–40  
100  
125  
Extended range (6)  
Notes to Table 5–2:  
(1) MAX II device in-system programming and/or user flash memory (UFM) programming via JTAG or logic array  
is not guaranteed outside the recommended operating conditions (for example, if brown-out occurs in the system  
during a potential write/program sequence to the UFM, users are recommended to read back UFM contents and  
verify against the intended write data).  
(2) Minimum DC input is –0.5 V. During transitions, the inputs may undershoot to –2.0 V for input currents less than  
100 mA and periods shorter than 20 ns.  
(3) During transitions, the inputs may overshoot to the voltages shown in the following table based upon input duty  
cycle. The DC case is equivalent to 100% duty cycle. For more information about 5.0-V tolerance, refer to the Using  
MAX II Devices in Multi-Voltage Systems chapter in the MAX II Device Handbook.  
VIN  
Max. Duty Cycle  
4.0 V 100% (DC)  
4.1  
4.2  
4.3  
4.4  
4.5  
90%  
50%  
30%  
17%  
10%  
(4) All pins, including clock, I/O, and JTAG pins, may be driven before VCCINT and VCCIO are powered.  
(5) MAX IIZ devices are only available in the commercial temperature range.  
(6) For the extended temperature range of 100 to 125º C, MAX II UFM programming (erase/write) is only supported  
via the JTAG interface. UFM programming via the logic array interface is not guaranteed in this range.  
Programming/Erasure Specifications  
Table 5–3 shows the MAX II device family programming/erasure  
specifications.  
Table 5–3. MAX II Device Programming/Erasure Specifications  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
Erase and reprogram cycles  
Cycles  
100 (1)  
Note to Table 5–3:  
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.  
Altera Corporation  
July 2008  
5–3  
MAX II Device Handbook, Volume 1  
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