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EPCS4SI8N 参数 Datasheet PDF下载

EPCS4SI8N图片预览
型号: EPCS4SI8N
PDF下载: 下载PDF文件 查看货源
内容描述: 串行配置器件 [Serial Configuration Devices]
分类和应用: 存储内存集成电路光电二极管过程控制系统PCSLTE可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 32 页 / 241 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Serial Configuration Device Memory Access  
Figure 4–10. Write Status Operation Timing Diagram  
nCS  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
DCLK  
ASDI  
DATA  
Operation Code  
Status Register  
7
6
5
4
3
2
1
0
MSB  
High Impedance  
Read Bytes Operation  
The read bytes operation code is b'0000 0011, with the MSB listed first.  
To read the memory contents of the serial configuration device, the  
device is first selected by driving nCSlow. Then, the read bytes operation  
code is shifted-in followed by a 3-byte address (A[23..0]). Each address  
bit must be latched-in on the rising edge of the DCLK. After the address is  
latched in, the memory contents of the specified address are shifted out  
serially on the DATApin, beginning with the MSB. Each data bit is shifted  
out on the falling edge of DCLK. The maximum DCLKfrequency during  
the read bytes operation is 20 MHz. Figure 4–11 shows the timing  
diagram for read bytes operation.  
The first byte addressed can be at any location. The device automatically  
increments the address to the next higher address after shifting out each  
byte of data. Therefore, the device can read the whole memory with a  
single read bytes operation. When the device reaches the highest address,  
the address counter restarts at 0x000000, allowing the memory contents  
to be read out indefinitely until the read bytes operation is terminated by  
driving nCShigh. The device can drive nCShigh any time after data is  
shifted out. If the read bytes operation is shifted in while a write or erase  
cycle is in progress, the operation will not be executed. Additionally, it  
will not have any effect on the write or erase cycle in progress.  
4–16  
Core Version a.b.c variable  
Altera Corporation  
July 2004  
Configuration Handbook, Volume 2