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EP1S20F672C7N 参数 Datasheet PDF下载

EP1S20F672C7N图片预览
型号: EP1S20F672C7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 2132 CLBs, 18460-Cell, CMOS, PBGA672, 35 X 35 MM, 1.27 MM PITCH, LEAD FREE, BGA-672]
分类和应用:
文件页数/大小: 292 页 / 1528 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Stratix Architecture  
Figure 2–19. M-RAM Block Control Signals  
Dedicated  
8
Row LAB  
Clocks  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
clocken_b  
clocken_a  
aclr_b  
renwe_b  
renwe_a  
Local  
Interconnect  
clock_a  
clock_b  
aclr_a  
One of the M-RAM block’s horizontal sides drive the address and control  
signal (clock, renwe, byteena, etc.) inputs. Typically, the horizontal side  
closest to the device perimeter contains the interfaces. The one exception  
is when two M-RAM blocks are paired next to each other. In this case, the  
side of the M-RAM block opposite the common side of the two blocks  
contains the input interface. The top and bottom sides of any M-RAM  
block contain data input and output interfaces to the logic array. The top  
side has 72 data inputs and 72 data outputs for port B, and the bottom side  
has another 72 data inputs and 72 data outputs for port A. Figure 2–20  
shows an example floorplan for the EP1S60 device and the location of the  
M-RAM interfaces.  
Altera Corporation  
July 2005  
2–37  
Stratix Device Handbook, Volume 1  
 
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