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EP1S20F672C7N 参数 Datasheet PDF下载

EP1S20F672C7N图片预览
型号: EP1S20F672C7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 2132 CLBs, 18460-Cell, CMOS, PBGA672, 35 X 35 MM, 1.27 MM PITCH, LEAD FREE, BGA-672]
分类和应用:
文件页数/大小: 292 页 / 1528 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
Figure 2–21. Left-Facing M-RAM to Interconnect Interface Notes (1), (2)  
M512 RAM Block Columns  
Row Unit Interface  
Allows LAB Rows to  
Drive Address and  
Control Signals to  
M-RAM Block  
LABs in Column  
M-RAM Boundary  
Column Interface Block  
Drives to and from  
C4 and C8 Interconnects  
B1  
B2  
B3  
B4  
B5  
B6  
Port B  
R11  
R10  
R9  
R8  
R7  
M-RAM Block  
R6  
R5  
R4  
R3  
R2  
R1  
Port A  
A3  
Column Interface Block  
Allows LAB Columns to  
Drive datain and dataout to  
and from M-RAM Block  
A1  
A2  
A4  
A5  
A6  
LABs in Row  
M-RAM Boundary  
LAB Interface  
Blocks  
Notes to Figure 2–21:  
(1) Only R24 and C16 interconnects cross the M-RAM block boundaries.  
(2) The right-facing M-RAM block has interface blocks on the right side, but none on the left. B1 to B6 and A1 to A6  
orientation is clipped across the vertical axis for right-facing M-RAM blocks.  
2–40  
Altera Corporation  
July 2005  
Stratix Device Handbook, Volume 1  
 
 
 
 
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