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EP1S20F672C7N 参数 Datasheet PDF下载

EP1S20F672C7N图片预览
型号: EP1S20F672C7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 2132 CLBs, 18460-Cell, CMOS, PBGA672, 35 X 35 MM, 1.27 MM PITCH, LEAD FREE, BGA-672]
分类和应用:
文件页数/大小: 292 页 / 1528 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
Table 2–11. M-RAM Combined Byte Selection for ×144 Mode Notes (1), (2)  
byteena[15..0]  
datain ×144  
[0] = 1  
[1] = 1  
[2] = 1  
[3] = 1  
[4] = 1  
[5] = 1  
[6] = 1  
[7] = 1  
[8] = 1  
[9] = 1  
[10] = 1  
[11] = 1  
[12] = 1  
[13] = 1  
[14] = 1  
[15] = 1  
[8..0]  
[17..9]  
[26..18]  
[35..27]  
[44..36]  
[53..45]  
[62..54]  
[71..63]  
[80..72]  
[89..81]  
[98..90]  
[107..99]  
[116..108]  
[125..117]  
[134..126]  
[143..135]  
Notes to Tables 2–10 and 2–11:  
(1) Any combination of byte enables is possible.  
(2) Byte enables can be used in the same manner with 8-bit words, i.e., in × 16, × 32,  
× 64, and × 128 modes.  
Similar to all RAM blocks, M-RAM blocks can have different clocks on  
their inputs and outputs. All input registers—renwe, datain, address,  
and byte enable registers—are clocked together from either of the two  
clocks feeding the block. The output register can be bypassed. The eight  
labclksignals or local interconnect can drive the control signals for the  
A and B ports of the M-RAM block. LEs can also control the clock_a,  
clock_b, renwe_a, renwe_b, clr_a, clr_b, clocken_a, and  
clocken_bsignals as shown in Figure 2–19.  
2–36  
Stratix Device Handbook, Volume 1  
Altera Corporation  
July 2005  
 
 
 
 
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