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EP1S20F672C7N 参数 Datasheet PDF下载

EP1S20F672C7N图片预览
型号: EP1S20F672C7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 2132 CLBs, 18460-Cell, CMOS, PBGA672, 35 X 35 MM, 1.27 MM PITCH, LEAD FREE, BGA-672]
分类和应用:
文件页数/大小: 292 页 / 1528 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Stratix Architecture  
Table 2–9. M-RAM Block Configurations (True Dual-Port)  
Port B  
16K × 36  
Port A  
64K × 9  
v
32K × 18  
v
8K × 72  
v
64K × 9  
32K × 18  
16K × 36  
8K × 72  
v
v
v
v
v
v
v
v
v
v
v
v
v
The read and write operation of the memory is controlled by the WREN  
signal, which sets the ports into either read or write modes. There is no  
separate read enable (RE) signal.  
Writing into RAM is controlled by both the WRENand byte enable  
(byteena) signals for each port. The default value for the byteena  
signal is high, in which case writing is controlled only by the WRENsignal.  
The byte enables are available for the ×18, ×36, and ×72 modes. In the  
×144 simple dual-port mode, the two sets of byteenasignals  
(byteena_aand byteena_b) are combined to form the necessary  
16 byte enables. Tables 2–10 and 2–11 summarize the byte selection.  
Table 2–10. Byte Enable for M-RAM Blocks Notes (1), (2)  
byteena[3..0]  
datain ×18  
datain ×36  
datain ×72  
[0] = 1  
[1] = 1  
[2] = 1  
[3] = 1  
[4] = 1  
[5] = 1  
[6] = 1  
[7] = 1  
[8..0]  
[8..0]  
[8..0]  
[17..9]  
[17..9]  
[17..9]  
[26..18]  
[26..18]  
[35..27]  
[44..36]  
[53..45]  
[62..54]  
[71..63]  
[35..27]  
Altera Corporation  
July 2005  
2–35  
Stratix Device Handbook, Volume 1  
 
 
 
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