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EP1S20F672C7N 参数 Datasheet PDF下载

EP1S20F672C7N图片预览
型号: EP1S20F672C7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 2132 CLBs, 18460-Cell, CMOS, PBGA672, 35 X 35 MM, 1.27 MM PITCH, LEAD FREE, BGA-672]
分类和应用:
文件页数/大小: 292 页 / 1528 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
Figure 2–20. EP1S60 Device with M-RAM Interface Locations Note (1)  
Independent M-RAM blocks  
interface to top, bottom, and side facing  
device perimeter for easy access  
to horizontal I/O pins.  
M-RAM pairs interface to  
top, bottom, and side opposite  
of block-to-block border.  
M-RAM  
Block  
M-RAM  
Block  
M-RAM  
Block  
M-RAM  
Block  
M-RAM  
Block  
M-RAM  
Block  
DSP  
Blocks  
M512  
Blocks  
M4K  
Blocks  
LABs  
DSP  
Blocks  
Note to Figure 2–20:  
(1) Device shown is an EP1S60 device. The number and position of M-RAM blocks varies in other devices.  
The M-RAM block local interconnect is driven by the R4, R8, C4, C8, and  
direct link interconnects from adjacent LABs. For independent M-RAM  
blocks, up to 10 direct link address and control signal input connections  
to the M-RAM block are possible from the left adjacent LABs for M-RAM  
2–38  
Altera Corporation  
July 2005  
Stratix Device Handbook, Volume 1  
 
 
 
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