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AS4LC8M8S0-10TC 参数 Datasheet PDF下载

AS4LC8M8S0-10TC图片预览
型号: AS4LC8M8S0-10TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 4Mx16和8Mx8 CMOS同步DRAM [3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 548 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC4M16S0  
AS4LC16M4S0  
®
write interrupted by write (BL = 4)  
CLK  
CMD  
ADD  
DQ  
t
CCD  
Write data Write data  
A
B
0
0
DB  
DB  
3
DA  
DB  
DB  
1
2
0
0
t
CDL  
t
t
= CAS to CAS delay (= 1 CLK)  
= last address in to new column addres delay (= 1 CLK)  
CCD  
CDL  
write interrupted by read (CL = 2, BL = 4)  
CLK  
t
CCD  
CMD  
ADD  
Write data Read data  
A
B
DQ (CL2)  
DQ (CL3)  
DA  
QB  
QB  
QB  
QB  
3
0
0
1
2
DA  
QB  
QB  
QB  
QB  
3
0
0
1
2
t
CDL  
t
t
= CAS to CAS delay (= 1 CLK)  
= last address in to new column addres delay (= 1 CLK)  
CCD  
CDL  
read interrupted by write (CL = 3, BL = 4)  
CLK  
CMD  
DQM  
DQ  
Read data  
Write data*  
Q
D
D
D
D
3
0
1
2
0
*
To prevent bus contention, maintain a gap between data in and data out.  
Burst termination  
Burst operations may be terminated with a Read, Write, Burst Stop, or Precharge command. When Burst Stop is asserted  
during the read cycle, burst read data is terminated and the data bus goes to High Z after CAS latency. When Burst Stop is  
asserted during the write cycle, burst write data is terminated and the databus goes to High Z simultaneously.  
Burst stop command waveform, read cycle  
(BL = 8)  
CLK  
CMD  
Read data  
Burst stop  
DQ (CL = 2)  
DQ (CL = 3)  
Q
Q
Q
2
0
1
Q
Q
Q
2
0
1
16  
ALLIANCE SEMICONDUCTOR  
7/ 5/ 00  
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