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AS4LC8M8S0-10TC 参数 Datasheet PDF下载

AS4LC8M8S0-10TC图片预览
型号: AS4LC8M8S0-10TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 4Mx16和8Mx8 CMOS同步DRAM [3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 548 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC8M8S0  
AS4LC4M16S0  
®
Concurrent Auto-P Waveforms  
According to Intel™s specification, auto-p burst interruption is allowed by another burst provided that the interrupting burst  
is in a different bank than the ongoing burst.  
(A) RD-P interrupted by RD in another bank (CL = 3, BL = 4)  
CLK  
RD  
(B)  
RD-P  
(A)  
CMD  
DQ  
A
A
B
B
B
B
3
0
1
0
1
2
Bank A Precharge Starts *  
(B) RD-P interrupted by WR in another bank (CL = 2, BL = 8)  
CLK  
RD-P  
(A)  
WR  
(B)  
CMD  
DQM  
D
DQ  
Q
D
D
D
(B2)  
Q
(B7)  
A1  
N(B0)  
(B1)  
A0  
Bank A Precharge Starts *  
(C) WR-P interrupted by RD in another bank (CL = 2, BL = 4)  
CLK  
WRP  
(A)  
RD  
(B)  
CMD  
Q
Q
B3  
D
D
Q
B0  
Q
DQ  
(A0)  
(A1)  
B2  
B1  
Bank A Precharge Starts *  
* The row active command of the precharge bank can be issued after t from this point.  
RP  
7/ 5/ 00  
ALLIANCE SEMICONDUCTOR  
13  
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