欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第41页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第42页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第43页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第44页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第46页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第47页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第48页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第49页  
AS4C256M16D3  
Write Operation  
DDR3 Burst Operation  
During a READ or WRITE command, DDR3 will support BC4 and BL8 on the fly using address A12 during the  
READ or WRITE (Auto Precharge can be enabled or disabled).  
A12=0, BC4 (BC4 = Burst Chop, tCCD=4)  
A12=1, BL8  
A12 is used only for burst length control, not as a column address.  
WRITE Timing Violations  
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make  
sure the DRAM works properly. However, it is desirable for certain minor violations that the DRAM is guaranteed  
not to “hang up” and errors be limited to that particular operation.  
For the following, it will be assumed that there are no timing violations with regard to the Write command itself  
(including ODT, etc.) and that it does satisfy all timing requirements not mentioned below.  
Data Setup and Hold Violations  
Should the strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a write  
burst, then wrong data might be written to the memory location addressed with the offending WRITE command.  
Subsequent reads from that location might result in unpredictable read data, however, the DRAM will work  
properly otherwise.  
Strobe to Strobe and Strobe to Clock Violations  
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing  
requirements (tDSS, tDSH, tDQSS) be violated, for any of the strobe edges associated with a Write burst, then  
wrong data might be written to the memory location addressed with the offending WRITE command. Subsequent  
reads from that location might result in unpredictable read data, however the DRAM will work properly otherwise.  
Write Timing Parameters  
This drawing is for example only to enumerate the strobe edges that “belong” to a write burst. No actual timing  
violations are shown here. For a valid burst all timing parameters for each edge of a burst need to be satisfied  
(not only for one edge ).  
Refresh Command  
The Refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is not  
persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires Refresh cycles at an  
average periodic interval of tREFI. When CS#, RAS#, and CAS# are held Low and WE# High at the rising edge  
of the clock, the chip enters a Refresh cycle. All banks of the SDRAM must be precharged and idle for a  
minimum of the precharge time tRP(min) before the Refresh Command can be applied. The refresh addressing  
is generated by the internal refresh controller. This makes the address bits “Don’t Care” during a Refresh  
command. An internal address counter suppliers the address during the refresh cycle. No control of the external  
address bus is required once this cycle has started. When the refresh cycle has completed, all banks of the  
SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the next valid  
command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min).  
In general, a Refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow  
for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval  
is provided. A maximum of 8 Refresh commands can be postponed during operation of the DDR3 SDRAM,  
meaning that at no point in time more than a total of 8 Refresh commands are allowed to be postponed. In case  
that 8 Refresh commands are postponed in a row, the resulting maximum interval between the surrounding  
Refresh commands is limited to 9 x tREFI. A maximum of 8 additional Refresh commands can be issued in  
advance (“pulled in”), with each one reducing the number of regular Refresh commands required later by one.  
Note that pulling in more than 8 Refresh commands in advance does not further reduce the number of regular  
Refresh commands required later, so that the resulting maximum interval between two surrounding Refresh  
command is limited to 9 x tREFI. Before entering Self-Refresh Mode, all postponed Refresh commands must be  
executed.  
Confidential  
45  
Rev. 3.0  
Aug. /2014  
 复制成功!