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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Power-Down Modes  
Power-Down Entry and Exit  
Power-Down is synchronously entered when CKE is registered low (along with NOP or Deselect command). CKE  
is not allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or  
read/write operation are in progress. CKE is allowed to go low while any of other operation such as row activation,  
precharge or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until  
finishing those operation.  
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is  
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read  
operation and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification  
as well proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM  
specifications.  
During Power-Down, if all banks are closed after any in progress commands are completed, the device will be in  
precharge Power-Down mode; if any bank is open after in progress commands are completed, the device will be  
in active Power-Down mode.  
Entering Power-down deactivates the input and output buffers, excluding CK, CK, ODT, CKE, and RESET#  
.
To protect DRAM internal delay on CKE line to block the input signals, multiple NOP or Deselect commands are  
needed during the CKE switch off and cycle(s) after, this timing period are defined as tCPDED. CKE_low will result  
in deactivation of command and address receivers after tCPDED has expired.  
Table 23. Power-Down Entry Definitions  
Status of DRAM  
MRS bit A12 DLL PD Exit Relevant Parameters  
Active  
(A Bank or more open)  
Don't Care  
On  
Off  
On  
Fast  
tXP to any valid command.  
tXP to any valid command. Since it is in  
precharge state, commands here will be ACT,  
Precharged  
(All Banks Precharged)  
0
1
Slow AR, MRS/EMRS, PR or PRA.  
tXPDLL to commands who need DLL to  
operate, such as RD, RDA or ODT control line.  
Precharged  
(All Banks Precharged)  
Fast  
tXP to any valid command.  
Also the DLL is disabled upon entering precharge power-down (Slow Exit Mode), but the DLL is kept enabled  
during precharge power-down (Fast Exit Mode) or active power-down. In power-down mode, CKE low, RESET#  
high, and a stable clock signal must be maintained at the inputs of the DD3 SDRAM, and ODT should be in a valid  
state but all other input signals are “Don’t care” (If RESET#goes low during Power-Down, the DRAM will be out of  
PD mode and into reset state).  
CKE low must be maintain until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the  
device. The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect  
command).CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be  
applied with power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined  
at AC spec table of this datasheet.  
Confidential  
47  
Rev. 3.0  
Aug. /2014  
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