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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
READ Timing Definitions  
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.  
Rising data strobe edge parameters:  
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK#. tDQSCK is the  
actual position of a rising strobe edge relative to CK, CK#. tQSH describes the DQS, DQS# differential output  
high time. tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest  
invalid transition of the associated DQ pins.  
Falling data strobe edge parameters:  
tQSL describes the DQS, DQS# differential output low time. tDQSQ describes the latest valid transition of the  
associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins.  
tDQSQ; both rising/falling edges of DQS, no tAC defined.  
Figure 18. READ timing Definition  
CK#  
CK  
tDQSCK,min  
tDQSCK,min  
tDQSCK,max  
tDQSCK,max  
Rising Strobe  
Region  
Rising Strobe  
Region  
tDQSCK  
tDQSCK  
tQSL  
tQSH  
DQS#  
DQS  
tQH  
tQH  
tDQSQ  
tDQSQ  
Associated  
DQ Pins  
Confidential  
42  
Rev. 3.0  
Aug. /2014  
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