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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Write Leveling Mode Exit  
The following sequence describes how Write Leveling Mode should be exited:  
1. After the last rising strobe edge (see ~T0), stop driving the strobe signals (see ~Tc0). Note: From now on, DQ  
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command  
(Te1).  
2. Drive ODT pin low (tIS must be satisfied) and keep it low (see Tb0).  
3. After the RTT is switched off, disable Write Level Mode via MRS command (see Tc2).  
4. After tMOD is satisfied (Te1), any valid command may be registered. (MR commands may be issued after  
tMRD (Td1).  
Figure 15. Timing details of Write Leveling exit  
Td1  
Te0  
NOP  
Te1  
Tb0  
NOP  
Tc0  
NOP  
Tc1  
NOP  
Tc2  
Td0  
T0  
T1  
T2  
Ta0  
CK#  
CK  
NOP  
NOP  
NOP  
NOP  
MRS  
MR1  
NOP  
VALID  
VALID  
VALID  
VALID  
COMMAND  
tMRD  
ADDRESS  
ODT  
tMOD  
tIS  
ODTLoff tAOFmin  
RTT_NOM  
RTT_DQS_DQS#  
tAOFmax  
DQS_DQS#  
RTT_DQ  
tWLO  
Notes 1  
DQ  
Result = 1  
UNDEFINED Driving MODE  
TRANSITIONING TIME BREAK  
Don't Care  
NOTES:  
1. The DQ result = 1 between Ta0 and Tc0 is a result of the DQS, DQS# signals capturing CK high just after the T0 state.  
Extended Temperature Usage  
Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3  
SDRAM devices support the following options or requirements referred to in this material:  
1. Auto Self-refresh supported  
2. Extended Temperature Range supported  
3. Double refresh required for operation in the Extended Temperature Range (applies only for devices  
supporting the Extended Temperature Range)  
Auto Self-Refresh mode - ASR mode  
DDR3 SDRAM provides an Auto-Refresh mode (ASR) for application ease. ASR mode is enabled by setting  
MR2 bit A6=1 and MR2 bit A7=0. The DRAM will manage Self-Refresh entry in either the Normal or Extended  
Temperature Ranges. In this mode, the DRAM will also manage Self-Refresh power consumption when the  
DRAM operating temperature changes, lower at low temperatures and higher at high temperatures. If the ASR  
option is not supported by DRAM, MR2 bit A6 must set to 0. If the ASR option is not enabled (MR2 bit A6=0),  
the SRT bit (MR2 bit A7) must be manually programmed with the operating temperature range required during  
Self-Refresh operation. Support of the ASR option does not automatically imply support of the Extended  
Temperature Range.  
Confidential  
39  
Rev. 3.0  
Aug. /2014  
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