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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Figure 12. Change Frequency during Precharge Power-down  
PREVIOUS CLOCK FREQUENCY  
NEW CLOCK FREQUENCY  
T0  
T1  
T2  
Ta0  
Tb0  
Tc0  
Tc1  
Td0  
Td1  
Te0  
Te1  
CK#  
CK  
tCHb tCLb  
tCKb  
tCHb tCLb  
tCKb  
tCH  
tCL  
tCHb tCLb  
tCKb  
tCKSRE  
tCK  
tCKSRX  
tCKE  
tIH  
tIS  
tIH  
CKE  
tIS  
tCPDED  
NOP  
NOP  
NOP  
NOP  
NOP  
MRS  
NOP  
VALID  
VALID  
COMMAND  
ADDRESS  
DLL  
RESET  
tXP  
tIH  
tAOFPD / tAOF  
ODT  
tIS  
DQS#  
DQS  
High-Z  
High-z  
DQ  
DM  
tDLLK  
Enter PRECHARGE  
Power-Down Mode  
Exit PRECHARGE  
Power-Down Mode  
Frequency Change  
Indicates a break  
in time scale  
NOTES  
1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down.  
Don't Care  
2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1;refer to ODT timing section for exact requirements  
3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT  
signal must continuously be registered LOW ensuring RTT is in an off state, as shown in Figure 13. If the RTT_NOM feature was disabled in the mode  
register prior to entering Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.  
Confidential  
36  
Rev. 3.0  
Aug. /2014  
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