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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Table 16. IDD specification parameters and test conditions (V  
DD = 1.5V 0.075V)  
-12  
BCN/BIN  
Parameter & Test Condition  
Symbol  
Unit  
Max.  
Operating One Bank Active-Precharge Current  
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: High between ACT and  
PRE; Command, Address, Bank Address Inputs: partially toggling; Data IO:  
MID-LEVEL; DM:stable at 0; Bank Activity: Cycling with one bank active at a  
time: 0,0,1,1,2,2,...;Output Buffer and RTT: Enabled in Mode Registers*2;  
ODT Signal: stable at 0.  
IDD0  
85  
mA  
Operating One Bank Active-Read-Precharge Current  
CKE: High; External clock: On; BL: 8*1, 7; AL:0; CS#: High between ACT, RD  
and PRE; Command, Address, Bank Address Inputs, Data IO: partially  
toggling; DM:stable at 0; Bank Activity: Cycling with one bank active at a  
time: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode Registers*2;  
ODT Signal: stable at 0.  
IDD1  
110  
mA  
Precharge Standby Current  
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: partially toggling; Data IO: MID-LEVEL;  
DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT:  
Enabled in Mode Registers*2; ODT Signal: stable at 0.  
IDD2N  
50  
18  
mA  
mA  
Precharge Power-Down Current Slow Exit  
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable  
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in  
Mode Registers*2; ODT Signal: stable at 0; Precharge Power Down Mode:  
Slow Exit.*3  
IDD2P0  
Precharge Power-Down Current Fast Exit  
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable  
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in  
Mode Registers*2; ODT Signal: stable at 0; Precharge Power Down Mode:  
Fast Exit.*3  
IDD2P1  
37  
mA  
Precharge Quiet Standby Current  
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL; DM:stable  
at 0;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in  
Mode Registers*2; ODT Signal: stable at 0.  
IDD2Q  
IDD3N  
IDD3P  
50  
70  
45  
mA  
mA  
mA  
Active Standby Current  
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: partially toggling; Data IO: MID-LEVEL;  
DM:stable at 0;Bank Activity: all banks open; Output Buffer and RTT:  
Enabled in Mode Registers*2; ODT Signal: stable at 0.  
Active Power-Down Current  
CKE: Low; External clock: On; BL: 8*1; AL: 0; CS#: stable at 1; Command,  
Address, Bank Address Inputs: stable at 0; Data IO: MID-LEVEL;DM:stable  
at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in  
Mode Registers*2; ODT Signal: stable at 0  
Operating Burst Read Current  
CKE: High; External clock: On; BL: 8*1, 7; AL: 0; CS#: High between RD;  
Command, Address, Bank Address Inputs: partially toggling; DM:stable at  
0; Bank Activity: all banks open, RD commands cycling through banks:  
0,0,1,1,2,2,...; tput Buffer and RTT: Enabled in Mode Registers*2; ODT  
Signal: stable at 0.  
IDD4R  
280  
225  
mA  
mA  
Operating Burst Write Current  
CKE: High; External clock: On; BL: 8*1; AL: 0; CS#: High between WR;  
Command, Address, Bank Address Inputs: partially toggling; DM: stable at  
0; Bank Activity: all banks open. Output Buffer and RTT: Enabled in Mode  
Registers*2; ODT Signal: stable at HIGH.  
IDD4W  
Confidential  
24  
Rev. 3.0  
Aug. /2014  
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