AS4C256M16D3
ODT high time without write command or
with write command and BC4
4
6
2
-
-
tCK
ODTH4
ODT high time with Write command and BL8
tCK
ODTH8
Asynchronous RTT turn-on delay
(Power- Down with DLL frozen)
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
8.5
tAONPD
ns
2
8.5
225
0.7
0.7
-
tAOFPD
tAON
ns
ps
tCK
tCK
tCK
-225
0.3
0.3
40
RTT turn-on
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
RTT dynamic change skew
tADC
First DQS/DQS# rising edge after write
leveling mode is programmed
tWLMRD
DQS/DQS# delay after write leveling
mode is programmed
Write leveling setup time from rising CK,
CK# crossing to rising DQS, DQS# crossing
Write leveling hold time from rising DQS,
DQS# crossing to rising CK, CK# crossing
25
-
-
-
tWLDQSEN
tWLS
tCK
ps
ps
165
165
tWLH
0
0
7.5
2
Write leveling output delay
tWLO
tWLOE
tRFC
ns
ns
ns
μs
μs
Write leveling output error
260
-
-
REF command to ACT or REF command time
7.8
3.9
-40°C to 85°C
Average periodic refresh interval
tREFI
-
85°C to 95°C
Confidential
28
Rev. 3.0
Aug. /2014
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
