ACT5880
Rev 2, 03-Sep-13
SINGLE-CELL LI+ CHARGER ELECTRICAL CHARACTERISTICS
(VCHGIN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CHARGE INPUT
Input Voltage Range
Nominal condition VCHGIN
VCHGIN
VCHGIN rising, OVPSET[1:0] = 00
0
7
Valid for Charging Input Voltage
Range
V
4.2
6.0
CHGIN OVP Threshold
6.3
CHGIN OVP Threshold Adjustment LSB weight for threshold adjustment, OVP-
200
Step
SET[1:0] from 00 to 11 stepping up.
mV
CHGIN OVP Threshold Hysteresis
CHGIN UVLO Threshold
CHGIN UVLO Hysteresis
Logic Low Input Level
Logic High Input Level
VCHGIN falling
200
4.0
V
CHGIN rising
CHGIN falling
3.8
1.4
4.2
0.4
V
V
500
mV
For ACIN and CHGLEV.
V
VCHGIN < VUVLO
50
100
300
CHGIN Supply Current
Suspended, SUSCHG[ ]=1.
End of charge sleep, CHG_DAT reads 1.
200
800
µA
1200
CHARGE REGULATION
For top-off, float-
ing or LDO mode
operation; No load
at VBAT.
Battery Regulation Voltage
VSET[3:0]=0101
4.179
19.5
4.2
20
4.221
20.5
V
Battery Regulation Voltage Adjust-
ment Resolution
Weight of the LSB,
VSET[3:0]=0000 to 1111
mV
%/V
Line Regulation
Load Regulation
VCHGIN =4.5V to 5.5V, IBAT=10mA
BAT=100mA to 1000mA
0.1
I
0.001 0.001 0.001
%/mA
CHGLEV=0 and ACIN=0, or ISET[3:0]=0000
CHGLEV=1 and ACIN=0, or ISET[3:0]=0100
75
90
105
0.5
mA
0.4
0.45
Fast Charge Current
A
ACIN=1, ISET[3:0]=1111
0.9
1
1.1
Fast Charge Current Adjustment
Resolution
Change per adjacent code stepping for ISET
[3:0] =0001 to 1111, from 0.3A to 1A.
50
10
mA
ISET[3:0]=0001 to 1111
8
12
3
%
Precondition Charge Current, ratio
to fast charge current.
ISET[3:0]=0000
VVBAT rising.
45
mA
V
Precondition Threshold
2.75
2.85
150
Precondition Threshold Hysteresis
V
VBAT falling.
mV
End of Charge Residual Ratio
Charge Restart Drop
Ratio to the fast charge current
8
10
12
%
Drop of the battery regulation voltage, falling.
180
220
264
mV
Thermal Regulation Action
RangeNOTE
Thermal regulation starts to current cut tem-
perature range, at the sensor junction.
90
140
˚C
www.active-semi.com
Copyright © 2013 Active-Semi, Inc.
Active-Semi Confidential―Do Not Copy or Distribute
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 50 -
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
