ACT5880
Rev 2, 03-Sep-13
SINGLE-CELL LI+ CHARGER ELECTRICAL CHARACTERISTICS
CONT’D
(VCHGIN = 5V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Path resistance from CHGIN to VBAT, in fully on
state.
On-Resistance
0.5
ꢀ
Reverse Blocking Put-in
Threshold
VCHGIN to VVBAT difference on the closed blocking
switch decreasing going.
28
80
32
93
8
42
mV
113
Reverse Blocking Put-out
Threshold
VCHGIN to VVBAT difference on the blocked switch
increasing going.
VCHGIN <VUVLO or Charging suspended, SUSCHG
[ ]=1.
VBAT Reverse Leakage
µA
CHARGE TIMING
Precondition Safe Timer Time-
out Programming Range
PRETIMO[1:0]=00 to 10 (11 for no timeout)
60
120
min
360
Total charge Time-out Period
Programming Range
TOTTIMO[1:0]=00 to 10 (11 for no timeout).
180
State Transition Delay Time
The time of a new state conditions to be qualified.
32
ms
CONDITIONING AND INDICATION DRIVING
Battery Installation Trap Level
No Battery Installation Level
Voltage at BATID; Level for installation detected.
2
V
Voltage at BATID; Level for no installation
detected.
2.5
Cell Hot Trap Divider Ratio
Cell Cold Trap Divider Ratio
0.349
0.748
Dividing of VCHGIN. Decreasing trip for hot trap,
increasing trip for cold trap.
Hot/Cold Trap Reverse Trips
Hysteresis
30
8
mV
mA
nSTAT Sinking Current
Input Leakage
VnSTAT=1V to 6V.
Applying 0V to 5V on the BATID, the TH, the
nSTAT.
-1
1
μA
Note:
The thermal regulation action range is characterized at small current situation, is guaranteed by design verification, char-
acterization and production process control.
See the TYPICAL PERFORMANCE CHARACTERISTICS for:
The Charge Current to Battery Voltage, at 5V Input.
The Charge Current to Battery Voltage, at 6V Input.
The Charge Current to Ambient Temperature, 6V Input.
The Charger Load Transition Response, LDO Mode.
www.active-semi.com
Copyright © 2013 Active-Semi, Inc.
Active-Semi Confidential―Do Not Copy or Distribute
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 51 -