ACT5880
Rev 2, 03-Sep-13
SYSTEM CONTROL ELECTRICAL CHARACTERISTICS
(VVBAT = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
2.6
4.2
2.4
TYP
MAX
5.5
6
UNIT
Operation Range
Operation Range
UVLO Threshold Voltage
UVLO Hysteresis
VVSYS
VCHGIN
VVSYS Rising
VSYS Falling
2.5
0.2
2.6
V
V
VVSYS, for SYSLEV[3:0]=0000 to 1111,
and VVBAT>VUVLO
SYSLEV Programming Range
0.1
SYSLEV Hysteresis
Voltage Reference
VVSYS Rising
0.2
1.2
TA = -40°C to +85°C
LOWIQ[ ] = 0
LOWIQ[ ] = 1
TRST[ ] = 0
-0.5
-1.5
0.5
1.5
Voltage Reference Accuracy
Reset Time-out
%
260
65
2
ms
TRST[ ] = 1
Oscillator Frequency
IO Logic High Input
1.8
1.4
2.2
MHz
V
VBAT=2.5V to 5.5V, TA = -40°C to 85°C.
V
HFPWR,
IO Logic Low Input
PWRHLD,
0.4
1
nIRQ, nRSTO,
IO Leakage Current
0-5.5V applied.
-1
μA
nPBSTAT
IO Output Low
Sinking 10mA.
0.3
18
V
Shutdown Current
All circuit blocks off
12
48
Deep sleep: REG2 in linear mode, the
VBBAT and the VALIVE are on, the RTC is
disabled, VVSYS=4.0V.
μA
No Load Current
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Temperature rising
Temperature falling
160
20
°C
Note:
See the I2C INTERFACE ELECTRICAL CHARACTERISTICS for SCL and SDA specifications.
See the TYPICAL PERFORMANCE CHARACTERISTICS for:
The Reference Voltage Line Regulation.
The Reference Voltage Temperature Coefficient.
The Oscillator Frequency Line Voltage Pulling.
www.active-semi.com
Copyright © 2013 Active-Semi, Inc.
Active-Semi Confidential―Do Not Copy or Distribute
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 46 -