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OTB25LPLL 参数 Datasheet PDF下载

OTB25LPLL图片预览
型号: OTB25LPLL
PDF下载: 下载PDF文件 查看货源
内容描述: 超快速的本地和长途线网络 [Ultra-Fast Local and Long-Line Network]
分类和应用:
文件页数/大小: 174 页 / 1510 K
品牌: ACTEL [ Actel Corporation ]
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PLUS  
ProASIC  
Flash Family FPGAs  
Embedded Memory Specifications  
This section discusses ProASICPLUS SRAM/FIFO embedded  
memory and its interface signals, including timing  
diagrams that show the relationships of signals as they  
pertain to single embedded memory blocks (Table 1-49).  
Table 1-12 on page 1-23 shows basic SRAM and FIFO  
configurations. Simultaneous read and write to the same  
location must be done with care. On such accesses the DI  
bus is output to the DO bus. Refer to the ProASICPLUS  
RAM and FIFO Blocks application note for more  
information.  
"Asynchronous SRAM Read, RDB Controlled"  
section on page 1-59  
"Synchronous SRAM Write"  
Embedded Memory Specifications  
The difference between synchronous transparent and  
pipeline modes is the timing of all the output signals  
from the memory. In transparent mode, the outputs will  
change within the same clock cycle to reflect the data  
requested by the currently valid access to the memory. If  
clock cycles are short (high clock speed), the data  
requires most of the clock cycle to change to valid values  
(stable signals). Processing of this data in the same clock  
cycle is nearly impossible. Most designers add registers at  
all outputs of the memory to push the data processing  
into the next clock cycle. An entire clock cycle can then  
be used to process the data. To simplify use of this  
Enclosed Timing Diagrams—SRAM Mode:  
"Synchronous SRAM Read, Access Timed Output  
Strobe (Synchronous Transparent)" section on  
page 1-55  
"Synchronous SRAM Read, Pipeline Mode Outputs  
(Synchronous Pipelined)" section on page 1-56  
memory  
setup,  
suitable  
registers  
have  
been  
"Asynchronous SRAM Write" section on page 1-57  
implemented as part of the memory primitive and are  
available to the user in the synchronous pipeline mode.  
In this mode, the output signals will change shortly after  
the second rising edge, following the initiation of the  
read access.  
"Asynchronous SRAM Read, Address Controlled,  
RDB=0" section on page 1-58  
Table 1-49 Memory Block SRAM Interface Signals  
SRAM Signal  
WCLKS  
RCLKS  
Bits  
1
In/Out  
In  
Description  
Write clock used on synchronization on write side  
1
In  
Read clock used on synchronization on read side  
Read address  
RADDR<0:7>  
RBLKB  
8
In  
1
In  
True read block select (active Low)  
True read pulse (active Low)  
RDB  
1
In  
WADDR<0:7>  
WBLKB  
8
In  
Write address  
1
In  
Write block select (active Low)  
DI<0:8>  
WRB  
9
In  
Input data bits <0:8>, <8> can be used for parity In  
Negative true write pulse  
1
In  
DO<0:8>  
RPE  
9
Out  
Out  
Out  
In  
Output data bits <0:8>, <8> can be used for parity Out  
Read parity error (active High)  
1
WPE  
1
Write parity error (active High)  
PARODD  
1
Selects Odd parity generation/detect when high, Even when low  
Note: Not all signals shown are used in all modes.  
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v5.2  
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