10.2.5.5 Wafer fabrication source.
Device type
Source
Die Detail
Figure Number
03
05
Matsushita Electronics Corp. Japan
Lockheed Martin Federal System, VA
A
B
A-1
A-1
10.3Absolute maximum ratings.
See paragraph 1.3 within the body of this drawing for details.
10.4Recommended operating conditions.
See paragraph 1.4 within the body of this drawing for details.
20. APPLICABLE DOCUMENTS.
20.1 Government specification, standards, and handbooks. Unless otherwise specified, the following specification, standard,
and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards (DoDISS)
and supplement thereto, form a part of this drawing to the extent specified herein.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOK
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
30. REQUIREMENTS.
30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-
389535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The Modification in
the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified
in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die physical dimensions. The die physical dimensions shall be specified in 10.2.5.1 and on figure A-1.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.5.2 and figure A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.5.3 and on figure A-1.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.5.4 and figure A-1.
30.2.5 Truth table(s). Where technically applicable, (for die) the truth table(s) shall be as defined within paragraph 3.2.3 of the
body of this document.
30.2.6 Radiation exposure circuit. The radiation exposure circuit will be as specified on figure 4 as shown within the body of
this document.
30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this
document.
SIZE
STANDARD
5962-90965
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
G
SHEET
20
DSCC FORM 2234
APR 97