AP4503GM
P-Channel
100
70
60
50
40
30
20
10
0
T A =25 o C
T A =150 o C
-10V
-10V
80
-7.0V
-7.0V
60
40
20
0
-5.0V
-4.5V
-5.0V
-4.5V
V
G =-3.0V
V G =-3.0V
0
1
2
3
4
0
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
50
40
30
20
1.6
I D = -6 A
I D =-6A
T
A =25 o C
V G =10V
1.4
1.2
1.0
0.8
0.6
Ω
-6.3
-5
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
7
6
5
4
3
2
1
0
2.5
2
T j =150 o C
T j =25 o C
1.5
1
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
-V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7