AP4503GM
N-Channel
100
70
60
50
40
30
20
10
0
T A =25 o C
T A =150 o
C
10V
10V
80
7.0V
60
40
20
0
7.0V
5.0V
4.5V
5.0V
4.5V
V
G =3.0V
V
G =3.0V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
42
38
34
30
26
22
18
I D =6A
I D =6A
T A =25 o C
VG =10V
Ω
-6.3
-5
-50
0
50
100
150
3
5
7
9
11
T j ,Junction Temperature ( o C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
7
6
5
4
3
2
1
0
T j =25 o C
T j =150 o
C
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
