AP4503GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
28mΩ
6.9A
D2
D2
D2
D2
▼ Low On-resistance
RDS(ON)
D1
D1
D1
D1
▼ Fast Switching Performance
ID
P-CH BVDSS
RDS(ON)
G2
G2
S2
S2
-30V
G1
SO-8
SO-8
S1
G1
36mΩ
-6.3A
S1
Description
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D2
D1
G2
G1
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
-30
VDS
VGS
Drain-Source Voltage
30
±20
6.9
5.5
30
V
V
Gate-Source Voltage
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-6.3
A
-5
A
-30
A
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
2.0
W
0.016
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
201225061-1/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
