AP4503GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
0.005
V/℃
mΩ
mΩ
V
RDS(ON)
-
-
-
28
42
3
-
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=6A
1
-
-
Forward Transconductance
5.7
-
S
IDSS
Drain-Source Leakage Current (T=25oC)
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=6A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
j
Drain-Source Leakage Current (T=70oC)
25
j
IGSS
Qg
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
9
2
6
8
7
19
6
15
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
-
VDS=15V
-
ID=1A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=15Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
610 970
VDS=25V
160
120
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=6A, VGS=0V
Min. Typ. Max. Units
VSD
IS
-
-
-
-
-
1.2
1.7
-
V
A
Continuous Source Current ( Body Diode )
Reverse Recovery Time
VD=VG=0V , VS=1.2V
IS=6A, VGS=0V
-
trr
18
11
ns
nC
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
