AP4503GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
-
V
V/℃
mΩ
mΩ
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
-0.004
-
RDS(ON)
-
-
-
36
-
55
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-6A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±20V
-1
-
-
-3
Forward Transconductance
5.8
-
-
S
Drain-Source Leakage Current ( =25oC)
IDSS
uA
uA
nA
nC
nC
nC
ns
-
-1
Tj
Drain-Source Leakage Current ( Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
-25
IGSS
Qg
-
-
±100
ID=-6A
-
9
24
-
Qgs
Qgd
td(on)
tr
VDS=-24V
-
2
VGS=-4.5V
-
5
-
VDS=-15V
-
12
8
-
ns
ID=-1A
-
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=15Ω
-
42
34
-
ns
-
-
pF
pF
pF
Ciss
Coss
Crss
Input Capacitance
VGS=0V
-
960 1540
Output Capacitance
Reverse Transfer Capacitance
VDS=-25V
-
300
220
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-6A, VGS=0V
Min. Typ. Max. Units
VSD
IS
-
-
-
-
-
-1.2
V
A
Continuous Source Current ( Body Diode )
Reverse Recovery Time
VD=VG=0V , VS=-1.2V
IS=-6A, VGS=0V
-
-1.7
trr
24
18
-
-
ns
nC
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
3/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
