AP4503GM
N-Channel
f=1.0MHz
10000
1000
100
12
I D =6A
DS =24V
10
8
V
Ciss
▼ Fast 6Switching Performance
Coss
Crss
4
2
0
10
0
4
8
12
16
1
5
9
13
17
21
25
29
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Dity factor=0.5
0.2
10
100us
0.1
0.1
0.05
0.02
1
1ms
0.01
PDM
10ms
Single Pulse
t
0.01
T
-6.3
-5
0.1
100ms
1s
10s
Duty factor = t/T
T A =25 o C
Peak Tj = PDM x Rthja + Ta
o
Rthja=135 C/W
Single Pulse
DC
0.01
0.001
0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
t
d(off)tf
td(on)
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5/7