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BM29F400B-15TC 参数 Datasheet PDF下载

BM29F400B-15TC图片预览
型号: BM29F400B-15TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX16, 150ns, PDSO48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 37 页 / 259 K
品牌: WINBOND [ WINBOND ]
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BRIGHT  
Microelectronics  
Inc.  
BM29F400T/BM29F400B  
machine is operating will be erroneous. Thus, these address locations will need rewriting after the  
device is reset.  
FEATURES  
·
5.0V +/- 10% Program and Erase  
· RESET  
-
Minimizes system-level power requirements  
High performance  
-
Hardware pin resets the internal state  
machine to the read mode  
-
90 nS access time  
·
Internal Erase Algorithms  
·
Compatible with JEDEC-standard Commands  
-
Automatically erases a sector, any  
combination of sectors, or the entire  
-
Uses software commands, pinouts, and  
packages following industry standards for  
single power supply Flash memory  
chip  
·
·
Internal Programming Algorithms  
·
·
Typically 100,000 Program/Erase Cycles  
Sector Erase Architecture  
-
Automatically programs and verifies data at a  
specified address  
-
One 16 Kbytes, two 8 Kbytes, one 32 Kbytes,  
and seven 64 Kbytes  
Low Power Consumption  
- 20 mA typical active read current for Byte  
Mode  
-
Any combination of sectors can be erased  
concurrently; also supports full chip erase  
-
28 mA typical active read current for Word  
Mode  
·
·
Erase Suspend/Resume  
-
30 mA typical write/erase current  
-
Suspend a sector erase operation to allow a  
data read in a sector not being erased within  
the same device  
·
·
Sector Protection  
- Hardware method disables any combination  
of sectors from a program or erase operation  
Ready/Busy  
-
RY/BY output pin for detection of  
Boot Code Sector Architecture  
programming or erase cycle completion  
FAMILY PART NO.  
-90  
90  
-120  
120  
120  
-150  
150  
150  
Maximum Access Time (nS)  
90  
CE  
OE  
(E) Access time (nS)  
(G) Access time (nS)  
35  
50  
60  
*This speed is available with Vcc = 5V +/- 5% variation  
- 2 -  
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