Microelectronics
Inc.
BRIGHT
BM29F400T/BM29F400B
machine is operating will be erroneous. Thus, these address locations will need rewriting after the
device is reset.
FEATURES
•
5.0V +/- 10% Program and Erase
−
Minimizes system-level power requirements
High performance
−
90 nS access time
Compatible with JEDEC-standard Commands
−
Uses software commands, pinouts, and
packages following industry standards for
single power supply Flash memory
Typically 100,000 Program/Erase Cycles
Sector Erase Architecture
−
One 16 Kbytes, two 8 Kbytes, one 32 Kbytes,
and seven 64 Kbytes
−
Any combination of sectors can be erased
concurrently; also supports full chip erase
•
RESET
−
Hardware pin resets the internal state
machine to the read mode
•
•
Internal Erase Algorithms
−
Automatically erases a sector, any
combination of sectors, or the entire
chip
Internal Programming Algorithms
−
Automatically programs and verifies data at a
specified address
Low Power Consumption
−
20 mA typical active read current for Byte
Mode
−
28 mA typical active read current for Word
Mode
−
30 mA typical write/erase current
•
•
•
•
•
Erase Suspend/Resume
−
Suspend a sector erase operation to allow a
data read in a sector not being erased within
the same device
Ready/Busy
−
RY/BY output pin for detection of
programming or erase cycle completion
•
•
Sector Protection
−
Hardware method disables any combination
of sectors from a program or erase operation
Boot Code Sector Architecture
•
FAMILY PART NO.
Maximum Access Time (nS)
CE
(E) Access time (nS)
OE
(G) Access time (nS)
-90
90
90
35
-120
120
120
50
-150
150
150
60
*This speed is available with Vcc = 5V +/- 5% variation
-2-
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