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BM29F04-12TC 参数 Datasheet PDF下载

BM29F04-12TC图片预览
型号: BM29F04-12TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, 120ns, PDSO32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 29 页 / 196 K
品牌: WINBOND [ WINBOND ]
 浏览型号BM29F04-12TC的Datasheet PDF文件第1页浏览型号BM29F04-12TC的Datasheet PDF文件第3页浏览型号BM29F04-12TC的Datasheet PDF文件第4页浏览型号BM29F04-12TC的Datasheet PDF文件第5页浏览型号BM29F04-12TC的Datasheet PDF文件第6页浏览型号BM29F04-12TC的Datasheet PDF文件第7页浏览型号BM29F04-12TC的Datasheet PDF文件第8页浏览型号BM29F04-12TC的Datasheet PDF文件第9页  
BRIGHT  
Microelectronics  
Inc.  
Preliminary BM29F040  
FEATURES  
· 5.0 V +/- 10% Program and Erase  
- Minimizes system power consumption  
- Simplifies the system design  
· Sector Erase architecture  
- 8 Equal sectors of 64K bytes each  
- Any combination of multiple Sector Erase  
- Full Chip Erase  
· Compatible with JEDEC standard commands  
· Sector Protection  
- Uses same software commands as  
EEPROMs  
- Any number of sectors can be protected from  
Program and Erase operation  
· Compatible with JEDEC-standard byte wide  
pinout  
· Low Power Consumption  
· Typically 100,000 Program/Erase cycles  
· Erase Suspend and Resume  
- 32 pin PLCC/TSOP  
- 32 pin DIP  
· Automated sector/chip Erase Algorithms  
- Suspend the Sector Erase Operation to  
allow a READ in another sector  
- No programming before Erase needed  
- Internal program and Erase Margin Check  
· Low Vcc Write inhibit < 3.2 volts  
· Single Cycle reset command  
· Data Polling and Toggle Bit  
- useful for detection of Program and Erase  
cycle completion  
Product Selection Guide  
FAMILY PART NO.  
-75*  
70  
-90  
90  
90  
-120  
120  
120  
-150  
150  
150  
Maximum Access Time (nS)  
70  
CE (E) Access time (nS)  
OE (G) Access time (nS)  
30  
35  
50  
60  
Table 1  
*This speed is available with Vcc = 5V +/- 5% variation  
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