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TGF2023-10 参数 Datasheet PDF下载

TGF2023-10图片预览
型号: TGF2023-10
PDF下载: 下载PDF文件 查看货源
内容描述: 50瓦分立功率氮化镓HEMT的SiC [50 Watt Discrete Power GaN on SiC HEMT]
分类和应用:
文件页数/大小: 7 页 / 220 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TGF2023-10  
Assembly Notes  
Component placement and adhesive attachment assembly notes:  
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.  
• Air bridges must be avoided during placement.  
• The force impact is critical during auto placement.  
• Organic attachment (i.e. epoxy) can be used in low-power applications.  
• Curing should be done in a convection oven; proper exhaust is a safety concern.  
Reflow process assembly notes:  
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.  
• An alloy station or conveyor furnace with reducing atmosphere should be used.  
• Do not use any kind of flux.  
• Coefficient of thermal expansion matching is critical for long-term reliability.  
• Devices must be stored in a dry nitrogen atmosphere.  
Interconnect process assembly notes:  
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.  
• Force, time, and ultrasonics are critical bonding parameters.  
• Aluminum wire should not be used.  
• Devices with small pad sizes should be bonded with 0.0007-inch wire.  
Ordering Information  
Part  
Package Style  
TGF2023-10  
GaN on SiC Die  
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should  
be observed during handling, assembly and test.  
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
Dec 2008 © Rev A  
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