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TGF2023-10 参数 Datasheet PDF下载

TGF2023-10图片预览
型号: TGF2023-10
PDF下载: 下载PDF文件 查看货源
内容描述: 50瓦分立功率氮化镓HEMT的SiC [50 Watt Discrete Power GaN on SiC HEMT]
分类和应用:
文件页数/大小: 7 页 / 220 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TGF2023-10  
Table I  
Absolute Maximum Ratings 1/  
Symbol  
Parameter  
Value  
Notes  
Vd  
Drain Voltage  
40 V  
-10 to 0 V  
10 A  
2/  
Vg  
Id  
Gate Voltage Range  
Drain Current  
2/  
2/  
Ig  
Gate Current  
56 mA  
35 dBm  
Pin  
Input Continuous Wave Power  
1/  
2/  
These ratings represent the maximum operable values for this device. Stresses beyond those listed  
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect  
device lifetime. These are stress ratings only, and functional operation of the device at these  
conditions is not implied.  
Combinations of supply voltage, supply current, input power, and output power shall not exceed the  
maximum power dissipation listed in Table IV.  
Table II  
Recommended Operating Conditions  
Symbol  
Vd  
Parameter  
Value  
28 - 40 V  
1 A  
Drain Voltage  
Drain Current  
Idq  
Id_Drive  
Vg  
Drain Current under RF Drive  
Gate Voltage  
3 A  
-3 V  
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com  
Dec 2008 © Rev A  
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