Electrical Characteristics: -40°C ≤ TJ ≤ 125°C, -40°C ≤ TA ≤ 105°C, 7.60V ≤ VCC ≤ 20V, UVLO = 3.0V, ISENSE = 0V,
V(CC) = 0.33µF, CGATE = 1nF (ESR = 10Ω), CSS = 470pF CV(FB) = 100pF, unless otherwise stated.
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ꢀ VCC Clamp and BIAS Pin
CS5124 Only. Connect an NFET as follows: BIAS = G, VCC = S, VIN = D.
VCC Clamp Voltage
36V ≤ VIN ≤ 60V, 220nF ≤
CSS ≤ 500nF, R = 500k
7.275
1.6
7.9
2.8
15
8.625
4
V
V
V
BIAS Minimum Voltage
BIAS Clamp
Measure Voltage on BIAS with:
10V ≤ VCC ≤ 20V and 50µA ≤ IBIAS ≤ 1mA
With BIAS pin sinking 1mA
12
20
ꢀ 200kHz Oscillator
Operating Frequency
Max Duty Cycle Clamp
CS5126 Only
175
78
200
82.5
18
225
85
kHz
%
Slope Compensation
(Normal operation)
12
23
mV/µs
Slope Compensation
(Synchronized operation)
(Note 1)
7
1
12
2
16
3
mV/µs
V
SYNC Input Threshold Voltage
SYNC Input Impedance
Measured with SYNC = 1V &10V
CS5124 Only
50
120
230
kΩ
ꢀ 400kHz Oscillator
Operating Frequency
Max Duty Cycle Clamp
Slope Compensation
360
80.0
15
400
82.5
21
440
85.0
26
kHz
%
mV/µs
ꢀ Soft Start
Soft Start Charge Current
Soft Start Discharge Current
7
10
13
µA
mA
V
0.5
1.40
10.0
1.62
VSS Voltage when VFB
Begins to Rise
VFB = 300mV
1.80
Peak Soft Start Charge Voltage
4.7
4.9
V
Valley Soft Start Discharge Voltage
200
275
400
mV
ꢀ Current Sense
CS5124 Only
First Current Sense Threshold
Second Current Sense Threshold
At max duty cycle.
170
250
60
195
275
90
215
315
130
mV
mV
ns
ISENSE to GATE Prop. Delay
0 to 700mV pulse into ISENSE
(after blanking time)
Leading Edge Blanking Time
Internal Offset
0 to 400mV pulse into ISENSE
(Note 1)
90
130
60
180
ns
mV
ꢀ Current Sense
CS5126 Only
First Current Sense Threshold
At max duty cycle
300
485
335
525
360
575
mV
mV
Second Current Sense
Threshold
ISENSE to GATE Prop. Delay
0 to 800mV pulse into ISENSE
(after blanking time)
60
90
130
210
ns
Leading Edge Blanking Time
Internal Offset
0 to 550mV pulse into ISENSE
(Note 1)
110
175
125
ns
mV
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
